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Metal-insulator transition induced by changes in composition in the Zr1−xScxNiSn solid solution range

✍ Scribed by Yu.V. Stadnyk; V.A. Romaka; Yu.K. Gorelenko; L.P. Romaka; D. Fruchart; V.F. Chekurin


Book ID
116599275
Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
179 KB
Volume
400
Category
Article
ISSN
0925-8388

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Bi 2 Sr 1.93 Cu 1.01 O 6+d thin films were deposited onto SiTiO 3 substrates by using DC magnetron sputtering. The structural characterization was carried out by X-ray diffraction. The effect of different oxygen pressures (f O 2 ) in the sputtering gas on the electrical resistivity of thin films is