The metal–insulator transition induced in Bi2Sr1.93Cu1.01O6+δ thin films by oxygen concentration in sputtering gas

✍ Scribed by A.V. Pop; G. Ilonca; M. Pop; D. Marconi

• Publisher: Elsevier Science
• Year: 2007
• Tongue: English
• Weight: 169 KB
• Volume: 460-462
• Category: Article
• ISSN: 0921-4534
• DOI: 10.1016/j.physc.2007.04.083

✦ Synopsis

Bi 2 Sr 1.93 Cu 1.01 O 6+d thin films were deposited onto SiTiO 3 substrates by using DC magnetron sputtering. The structural characterization was carried out by X-ray diffraction. The effect of different oxygen pressures (f O 2 ) in the sputtering gas on the electrical resistivity of thin films is presented. The value of sheet resistance per CuO 2 layer, R Q , is larger than the conventional quantum resistance, but is in agreement with the value estimated for 2D disordered systems. The log(1/T) behaviour of q(T), in the region of the metal-insulator (MI) transition, is analyzed in a non-Fermi liquid model with a singular density of states in the presence of randomly distributed non-magnetic impurities.