Metal-insulator transition and phase separation in doped AA-stacked graphene bilayer
β Scribed by Sboychakov, A. O.; Rakhmanov, A. L.; Rozhkov, A. V.; Nori, Franco
- Book ID
- 120161682
- Publisher
- The American Physical Society
- Year
- 2013
- Tongue
- English
- Weight
- 254 KB
- Volume
- 87
- Category
- Article
- ISSN
- 1098-0121
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
## Abstract We show for __n__ βtype semiconductors, using Ge:As and 4__H__ βSiC:N as examples, that the spin density measured by electron spin resonance (ESR) falls sharply near the insulatorβmetal (IM) transition. Two reasons might be responsible for this phenomenon: potential fluctuations with co
Experimental evidence of a nonvolatile electric-pulse-induced insulator-to-metal transition and possible superconductivity in the Mott insulator GaTa4 Se8 is reported. Scanning tunneling microscopy experiments show that this unconventional response of the system to short electric pulses arises from