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Memory traps in MNOS diodes measured by thermally stimulated current

✍ Scribed by Teruaki Katsube; Yoshio Adachi; Toshiaki Ikoma


Publisher
Elsevier Science
Year
1976
Tongue
English
Weight
554 KB
Volume
19
Category
Article
ISSN
0038-1101

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## Abstract Thermally stimulated current measurements were carried out on as‐grown AgIn~5~S~8~ single crystals. The investigations were performed in temperatures ranging from 10 to 70 K with heating rate of 0.2 Ks^–1^. The analysis of the data revealed the electron trap level located at 5 meV. The