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Memory switching of germanium tellurium amorphous semiconductor

✍ Scribed by M.M. Abdel-Aziz

Book ID
103818298
Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
367 KB
Volume
253
Category
Article
ISSN
0169-4332

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Effect of tellurium (Te) addition on the physical properties, density (r), molar volume (V m ), compactness (d), cohesive energy (CE), coordination number (m), lone pair electrons (L) and glass transition temperature (T g ) of Ge 10 Se 90Γ€x Te x (x ΒΌ 0, 10, 20, 30, 40, 50) bulk glassy alloy has been