Effect of tellurium addition on the physical properties of germanium selenide glassy semiconductors
β Scribed by Pankaj Sharma; S.C. Katyal
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 211 KB
- Volume
- 403
- Category
- Article
- ISSN
- 0921-4526
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β¦ Synopsis
Effect of tellurium (Te) addition on the physical properties, density (r), molar volume (V m ), compactness (d), cohesive energy (CE), coordination number (m), lone pair electrons (L) and glass transition temperature (T g ) of Ge 10 Se 90Γx Te x (x ΒΌ 0, 10, 20, 30, 40, 50) bulk glassy alloy has been investigated. The density of the glassy alloys has been found to increase with the increasing Te content. The molar volume and compactness of the structure of the glass, determined from measured density of the glass, have been found to increase with the increase of Te content. The CE of the investigated samples has been calculated using the chemical bond approach (CBA) and is correlated with decrease in optical band gap with the increase of Te content. The glass transition temperature has been estimated using Tichy-Ticha approach and found to increase with the increase of Te content. This has been observed that the estimated glass transition temperature using Tichy-Ticha approach is not consistent with experimental results.
π SIMILAR VOLUMES
The temperature and intensity dependence of photoconductivity measurements has been studied in amorphous thin films of Se 80Γx Ge 20 Ag x (x ΒΌ 0, 5, 10) prepared by vacuum evaporation. The dark conductivity (s d ) increases and the activation energy (DE) decreases as the Ag concentration increases i