Memory characteristics of Al nanocrystals embedded in Al2O3 layers
β Scribed by Byoungjun Park; Kyoungah Cho; Byung-Moo Moon; Sangsig Kim
- Book ID
- 108207752
- Publisher
- Elsevier Science
- Year
- 2007
- Tongue
- English
- Weight
- 331 KB
- Volume
- 84
- Category
- Article
- ISSN
- 0167-9317
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In order to investigate charge trap characteristics with various thicknesses of blocking and tunnel oxide for application to non-volatile memory devices, we fabricated 5 and 15 nm Al 2 O 3 /5 nm La 2 O 3 /5 nm Al 2 O 3 and 15 nm Al 2 O 3 /5 nm La 2 O 3 /5, 7.5, and 10 nm Al 2 O 3 multi-stack films,
In this paper, Ge/Al 2 O 3 multilayer systems were grown by pulsed laser ablation. The grown samples were annealed at 900 Β°C to promote the formation of Ge nanocrystals. Rutherford backscattering spectroscopy and transmission electron microscopy confirmed the presence of a multilayer system. Grazing