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Mechano-electronic Superlattices in Silicon Nanoribbons

โœ Scribed by Huang, Minghuang; Ritz, Clark S.; Novakovic, Bozidar; Yu, Decai; Zhang, Yu; Flack, Frank; Savage, Donald E.; Evans, Paul G.; Knezevic, Irena; Liu, Feng; Lagally, Max G.


Book ID
127116515
Publisher
American Chemical Society
Year
2009
Tongue
English
Weight
46 KB
Volume
3
Category
Article
ISSN
1936-0851

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Electronic structure of silicon superlat
โœ Srinivasan Krishnamurthy; John A. Moriarty ๐Ÿ“‚ Article ๐Ÿ“… 1985 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 402 KB

Utilizing a new complex-band-structure technique, the electronic structure of model Si-Sil\_xGe x and MOS superlattices have been obtained over a wide range of layer thickness d (11 ~ d ~ 110 A). For d ~ 44 A, it is found that these systems exhibit a direct fundamental band gap. Further calculations