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Mechanisms of photoluminescence upconversion at the GaAs/(ordered) GaInP2 interface

โœ Scribed by Z.P. Su; K.L. Teo; P.Y. Yu; K. Uchida

Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
387 KB
Volume
99
Category
Article
ISSN
0038-1098

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๐Ÿ“œ SIMILAR VOLUMES

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We have measured the photoluminescence (PL) spectra of GaAs/GaInP single quantum wells at pressure up to %5 GPa, and investigated the characteristics of the 1.46 eV deep emission band. It has a very long decay time of several hundred nanoseconds. In addition, unlike the emission from the GaAs well,