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Mechanisms of crystallization of bulk GaN from the solution under high N2 pressure

✍ Scribed by I Grzegory; M Boćkowski; B Łucznik; S Krukowski; Z Romanowski; M Wróblewski; S Porowski

Book ID
108341728
Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
694 KB
Volume
246
Category
Article
ISSN
0022-0248

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High nitrogen pressure solution growth of bulk GaN in “feed-seed” configuration
✍ Boćkowski, M. ;Grzegory, I. ;Łucznik, B. ;Sochacki, T. ;Kryśko, M. ;Strąk, P. ;D 📂 Article 📅 2011 🏛 John Wiley and Sons 🌐 English ⚖ 306 KB

## Abstract In this paper the growth and physical properties of HNPS‐GaN crystallized in “feed‐seed” configuration is described. The idea of this configuration is based on the conversion of the free standing HVPE‐GaN crystals to the free standing HNPS‐GaN. The influence of the c‐plane bowing in the