High nitrogen pressure solution growth of bulk GaN in “feed-seed” configuration

✍ Scribed by Boćkowski, M. ;Grzegory, I. ;Łucznik, B. ;Sochacki, T. ;Kryśko, M. ;Strąk, P. ;Dzięcielewski, I. ;Litwin-Staszewska, E. ;Porowski, S.

• Book ID: 105366050
• Publisher: John Wiley and Sons
• Year: 2011
• Tongue: English
• Weight: 306 KB
• Volume: 208
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.201000981

✦ Synopsis

Abstract

In this paper the growth and physical properties of HNPS‐GaN crystallized in “feed‐seed” configuration is described. The idea of this configuration is based on the conversion of the free standing HVPE‐GaN crystals to the free standing HNPS‐GaN. The influence of the c‐plane bowing in the initial substrate on quality, rate, and mode of growth from solution is analyzed.