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High nitrogen pressure solution growth of GaN in multi feed-seed configuration

✍ Scribed by M. Bockowski; B. Lucznik; T. Sochacki; B. Sadovyi; G. Nowak; E. Litwin-Staszewska; I. Grzegory

Book ID
112182258
Publisher
John Wiley and Sons
Year
2012
Tongue
English
Weight
266 KB
Volume
9
Category
Article
ISSN
1862-6351

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High nitrogen pressure solution growth of bulk GaN in “feed-seed” configuration
✍ Boćkowski, M. ;Grzegory, I. ;Łucznik, B. ;Sochacki, T. ;Kryśko, M. ;Strąk, P. ;D 📂 Article 📅 2011 🏛 John Wiley and Sons 🌐 English ⚖ 306 KB

## Abstract In this paper the growth and physical properties of HNPS‐GaN crystallized in “feed‐seed” configuration is described. The idea of this configuration is based on the conversion of the free standing HVPE‐GaN crystals to the free standing HNPS‐GaN. The influence of the c‐plane bowing in the