Mechanisms of cluster implantation in silicon: A molecular-dynamics study
✍ Scribed by Ihara, Sigeo; Itoh, Satoshi; Kitakami, Jun’ichi
- Book ID
- 124169109
- Publisher
- The American Physical Society
- Year
- 1998
- Tongue
- English
- Weight
- 402 KB
- Volume
- 58
- Category
- Article
- ISSN
- 1098-0121
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📜 SIMILAR VOLUMES
## Abstract Born–Oppenheimer molecular dynamics is implemented in the semiempirical self‐consistent field molecular orbital method MSINDO. The method is employed for the investigation of the structure and dynamics of silicon clusters of various sizes. The reliability of the present parameterization
Cluster ion implantation is a useful technique for manufacturing ultra-shallow-junction. In order to investigate the depth and lateral distribution as well as cluster dissociation, we performed a molecular dynamics simulation that injects 200-500 eV/atom boron cluster into single crystal silicon. Th