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Mechanisms for incorporation of hydrogen in and on terrestrial planetary surfaces

โœ Scribed by M.D. Dyar; C.A. Hibbitts; T.M. Orlando


Book ID
108138881
Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
474 KB
Volume
208
Category
Article
ISSN
0019-1035

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Some mechanisms for the incorporation of
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## Abstract Hfโ€based materials are the leading candidates to replace SiO~2~ gate dielectrics in future Siโ€based metalโ€“oxideโ€“semiconductor fieldโ€effect transistors and H inside gate dielectrics has recognized roles on device performance and reliability. In this context, by employing nuclear reaction