Mechanism of stress relaxation in (0001) InGaN/GaN via formation of V-shaped dislocation half-loops

✍ Scribed by Lobanova, A. V.; Kolesnikova, A. L.; Romanov, A. E.; Karpov, S. Yu.; Rudinsky, M. E.; Yakovlev, E. V.

• Book ID: 121407401
• Publisher: American Institute of Physics
• Year: 2013
• Tongue: English
• Weight: 463 KB
• Volume: 103
• Category: Article
• ISSN: 0003-6951
• DOI: 10.1063/1.4824835