𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Mechanism of radiative recombination in the region of interband transitions in Si-Ge solid solutions

✍ Scribed by A. M. Emel’yanov; N. A. Sobolev; T. M. Mel’nikova; N. V. Abrosimov

Book ID
110144213
Publisher
Springer
Year
2005
Tongue
English
Weight
43 KB
Volume
39
Category
Article
ISSN
1063-7826

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Influence of the Si–Ge interface on phon
Influence of the Si–Ge interface on phononless radiative recombination in Ge hut clusters grown on Si (0 0 1)
✍ M.W Dashiell; U Denker; O.G Schmidt 📂 Article 📅 2002 🏛 Elsevier Science 🌐 English ⚖ 111 KB

Intense photoluminescence (PL) is observed from Ge hut clusters grown by molecular beam epitaxy on Si (0 0 1). Phononless radiative recombination results from three-dimensional carrier conÿnement of electrons in the surrounding tensile-strained Si and holes within the Ge hut. Post-growth annealing e