✦ LIBER ✦

Mechanism of light production in metal-insulator-semiconductor diodes; GaN:Mg violet light-emitting diodes

✍ Scribed by H.P. Maruska; D.A. Stevenson

Publisher: Elsevier Science
Year: 1974
Tongue: English
Weight: 608 KB
Volume: 17
Category: Article
ISSN: 0038-1101
DOI: 10.1016/0038-1101(74)90161-0

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Importance of Nonradiative Recombination

Importance of Nonradiative Recombination Processes in Violet/UV InGaN Light Emitting Diodes

✍ Stephan, T. ;Kunzer, M. ;Schlotter, P. ;Pletschen, W. ;Obloh, H. ;M�ller, S. ;K� 📂 Article 📅 2002 🏛 John Wiley and Sons 🌐 English ⚖ 93 KB 👁 2 views

The Role of Transition Metal Oxides in C

The Role of Transition Metal Oxides in Charge-Generation Layers for Stacked Organic Light-Emitting Diodes

✍ Sami Hamwi; Jens Meyer; Michael Kröger; Thomas Winkler; Marco Witte; Thomas Ried 📂 Article 📅 2010 🏛 John Wiley and Sons 🌐 English ⚖ 228 KB 👁 3 views

## Abstract The mechanism of charge generation in transition metal oxide (TMO)‐based charge‐generation layers (CGL) used in stacked organic light‐emitting diodes (OLEDs) is reported upon. An interconnecting unit between two vertically stacked OLEDs, consisting of an abrupt heterointerface between a