Mechanism of hydrogen sensing by Pd/TiO2 Schottky diodes
β Scribed by Hikaru Kobayashi; Kazuyuki Kishimoto; Yoshihiro Nakato; Hiroshi Tsubomura
- Publisher
- Elsevier Science
- Year
- 1993
- Tongue
- English
- Weight
- 250 KB
- Volume
- 13
- Category
- Article
- ISSN
- 0925-4005
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Improved methods for hydrogen leak detection are gaining interest as applications emerge in hydrogen-powered automobiles, proton-exchange membrane fuel cells, solid oxide fuel cells for spacecraft, and other industrial long-term sensing applications. Considerable progress has been demonstrated to da
The surface phosphidization and bulk hydrogenation for GaAs on Si has been realized simultaneously using the Ε½ . phosphine PH -added H plasma-exposure schemes. The PH rH plasma-exposed GaAs Schottky diodes showed Ε½ . significant increase in reverse breakdown voltage V , which was believed to be due