Hydrogenation of GaAs-on-Si Schottky diodes by PH3-added H2 plasma

✍ Scribed by G Wang; T Ogawa; T Soga; T Egawa; T Jimbo; M Umeno

• Publisher: Elsevier Science
• Year: 2000
• Tongue: English
• Weight: 137 KB
• Volume: 159-160
• Category: Article
• ISSN: 0169-4332
• DOI: 10.1016/s0169-4332(00)00049-0

✦ Synopsis

The surface phosphidization and bulk hydrogenation for GaAs on Si has been realized simultaneously using the Ž . phosphine PH -added H plasma-exposure schemes. The PH rH plasma-exposed GaAs Schottky diodes showed

Ž . significant increase in reverse breakdown voltage V , which was believed to be due to the deactivation of dislocation-rebr Ž . lated deep levels. By the incorporation of phosphorous P atoms, the plasma-induced damages were effectively suppressed, and the passivated GaAs Schottky diodes on Si showed a good thermal stability.