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Mechanism of highly selective SiO 2 contact hole etching

โœ Scribed by Matsui, Miyako; Tatsumi, Tetsuya; Sekine, Makoto

Book ID
120491094
Publisher
Institute of Physics
Year
2002
Tongue
English
Weight
105 KB
Volume
11
Category
Article
ISSN
0963-0252

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โœ Takumi Nakahata; Kohei Sugihara; Taisuke Furukawa; Yasutaka Nishioka; Shigemitsu ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 944 KB

We demonstrated that the influences of a contact hole overlapping a local oxidation of silicon (LOCOS) isolation can be reduced by using selective epitaxial growth, which is improved the alignment margin of the contact hole in the LOCOS region. The experimental results indicated that the epitaxial l