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Mechanism of Fatigue in Ferroelectric Thin Films

โœ Scribed by Yoo, I. K. ;Desu, S. B.


Book ID
105383392
Publisher
John Wiley and Sons
Year
1992
Tongue
English
Weight
413 KB
Volume
133
Category
Article
ISSN
0031-8965

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Novel fatigue-free layered structure fer
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For the first time, fatigue-free ferroelectric thin-film capacitors have been fabricated, using pulsed laser deposition, with the layerstructure family of oxides as the ferroelectric material. Stoichiometric thin films of layer-structured SiBr2(TaxNb2\_ ~)O~ (0 < x < 2) compounds were successfully d