Novel fatigue-free layered structure ferroelectric thin films

✍ Scribed by Seshu B. Desu; Dilip P. Vijay

• Publisher: Elsevier Science
• Year: 1995
• Tongue: English
• Weight: 738 KB
• Volume: 32
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/0921-5107(95)80017-4

✦ Synopsis

For the first time, fatigue-free ferroelectric thin-film capacitors have been fabricated, using pulsed laser deposition, with the layerstructure family of oxides as the ferroelectric material. Stoichiometric thin films of layer-structured SiBr2(TaxNb2_ ~)O~ (0 < x < 2) compounds were successfully deposited on platinized Si/SiO 2 wafers. Technological opportunities now exist for the development of commercially viable ferroelectric random access memory devices using these materials. So far, this has been primarily hindered by degradation problems such as fatigue in the currently investigated ferroelectric thin film capacitors, e.g. PbZr~Ti t .,O~ films on Pt electrodes. The identification of these fatigue-free thin-film materials and their processing, structure and properties are discussed in this paper. The films show very good hysteresis characteristics with a remnant polarization value of 11 j~C cm -~-, and no fatigue was observed up to 1 (P switching cycles.