Mechanism and kinetics of early growth stages of a GaN film
✍ Scribed by S. A. Kukushkin; V. N. Bessolov; A. V. Osipov; A. V. Luk’yanov
- Book ID
- 110131794
- Publisher
- SP MAIK Nauka/Interperiodica
- Year
- 2002
- Tongue
- English
- Weight
- 85 KB
- Volume
- 44
- Category
- Article
- ISSN
- 1063-7834
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
The simulation of the early stages of thin film formation is performed using a phenomenological approach considering the surface diffusion of the adatoms and the migration of islands. The model describes the kinetics of low surface coverage as well as of higher surface coverage. The effects of atom
Among the various materials suitable for organic thin-film transistors (OTFTs), pentacene stands out as a model molecule, exhibiting one of the highest field effect mobilities reported so far. Understanding the growth mechanism of pentacene on dielectrics is essential for controlling film morphology