𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Mechanical Stress and Defect Formation in Device-Processing: Validity of the Numerical Models for Mechanical Stress Calculation

✍ Scribed by Polignano, M.L.; Carnevale, G.P.; Mica, I.; Pastore, C.

Book ID
114618664
Publisher
IEEE
Year
2007
Tongue
English
Weight
465 KB
Volume
54
Category
Article
ISSN
0018-9383

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

The mechanism of the recrystallization p
The mechanism of the recrystallization process in epitaxial GaN under dynamic stress field: atomistic origin of planar defect formation
✍ C. R. Das; S. Dhara; H. C. Hsu; L. C. Chen; Y. R. Jeng; A. K. Bhaduri; Baldev Ra πŸ“‚ Article πŸ“… 2009 πŸ› John Wiley and Sons 🌐 English βš– 262 KB

## Abstract The mechanism of the recrystallization in epitaxial (0001) GaN film, introduced by the indentation technique, is probed by lattice dynamic studies using Raman spectroscopy. The recrystallized region is identified by micro‐Raman area mapping. β€˜Pop‐in’ bursts in loading lines indicate nuc