𝔖 Bobbio Scriptorium
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Mechanical plating - the impact process to avoid embrittlement

✍ Scribed by J.F. Moore


Publisher
Elsevier Science
Year
1984
Weight
176 KB
Volume
10
Category
Article
ISSN
0378-3804

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Apparent degradation of the RF characteristics of silicon MOSFETs was observed under normal operating conditions. We show that it was not caused by intrinsic device degradation but originated from a degradation of the contact resistance between probe and bonding pad. Guidelines, not limited to MOSFE