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Measurements of tunneling barrier thicknesses for Nb/Al–AlOx/Nb tunnel junctions

✍ Scribed by Kang, Xinjie; Ying, Liliang; Wang, Hai; Zhang, Guofeng; Peng, Wei; Kong, Xiangyan; Xie, Xiaoming; Wang, Zhen

Book ID
124116255
Publisher
Elsevier Science
Year
2014
Tongue
English
Weight
969 KB
Volume
503
Category
Article
ISSN
0921-4534

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~urrent -voltage measurements on high conductance Nb/AIOx/AI/AIOx/Nb tunnel junction devices show a step In the sub-gap structure corresponding to the difference in the energy gaps V=2(!lNb-!lAI) of the two sup~.rcC?nduct~.rs. The measured !lAI is large. a~d'persists to temperature considerably in e