Measurement of the grain boundary diffusion of In in Ni bicrystals by the SIMS technique
โ Scribed by W. Gust; M. R Hintz; A. Lodding; H. Odelius; B. Predel
- Publisher
- Elsevier Science
- Year
- 1982
- Weight
- 989 KB
- Volume
- 30
- Category
- Article
- ISSN
- 0001-6160
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โฆ Synopsis
The diffusivity of indium as an impurity along grain boundaries in nickel bicrystals of known orientation has been measured using secondary ion mass spectrometry ISIMS). The values obtained are very large and comparable in magmtude to those observed by Hillert and Purdy. and by Smidoda. Gottschalk and Gleiter for migrating interfaces.
These results along with other data from the literature lead to a different interpretation of the migrating interface results than that presented by original authors. It is suggested that the high observed interfacial diffusivities may be the cause rather than the result of the observed interracial migration. R&utn&--Nous avons mesure par spectrometrie de masse d'ions secondaires. la diffusivite intergranufaire de I'impurete In dam des bicristaux de nickel d'orientation connue. Les valeurs obtenues sont tres grandes: elles sont comparables a celles observks par Hillert et Purdy. et par Smidoda, Gottschalk et Gleiter pour des interfaces en tours de migration. Ces resultats et d'autres don&es de la litterature conduisent B une interpretation des rtsultats concernant les interfaces en cours de migration. differente de celle avancee par les auteurs. Nous pensons que les diffusivites interfaciaies Clevees qui ont CtC observees pourraient itre la cause plutot que I'effet de la migration de f'interface. Zuaammenfaastmg--Mittels Sekundlrionen-Massenspektrometrie (SIMS) wird das Korngrenzendiffusionsvermogen von In in definierten Ni-Zweikristallen gemessen. Die ermittelten Werte sind sehr grolj. Sie sind in der GroBenordnung vergleichbar mit den von Hillert und Purdy. und Smidoda. Gottschalk und Gleiter fir wandernde Korn-bzw. Phasengrenzen ermittehen Werten. Diese Ergebnisse ftihren zusammen mit anderen Literaturangaben zu einer neuen Interpretation des Diffusionsverm~gens wandernder Kern-und Phasengrenzen. die von der anderer Autoren abweicht. Es wird dargelegt. daB das hohe. experimentell ermittehe Diffusionsverm~gen der Grund und nicht das Ergebnis der Korn-bzw. Phasengrenzenwanderung ist,
๐ SIMILAR VOLUMES
We have measured the diffusion of aNi radiotracer into polycrystalline NiO. nominally doped with 0.1% Cr (Cr/Ni ratio) in the temperature range 600 to 900ยฐC. The experiments show that Cr doping increases diffusion of Ni in the oxide lattice, but decreases diffusion of Ni along grain boundaries provi
diameters on each atom plane; and this is clearly not achieved over large volumes of the material. The nearest approximation to this case is fine flip, in which the displacement is about 50 k on many slip-planes 200 pi apart. Here the maximum rise in temperat~e might be a few degrees if many of t-he