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Measurement and characterization of thin film module reliability

✍ Scribed by R.G. Ross Jr.; G.R. Mon; L. Wen; C.C. Gonzalez; R.S. Sugimura


Publisher
Elsevier Science
Year
1988
Weight
796 KB
Volume
24
Category
Article
ISSN
0379-6787

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✦ Synopsis


As an indication of the evolving nature and continuing growth of photovoltaic technology, thin film amorphous silicon (a-Si) power modules have made their commercial debut during the past two years. Early experience with this technology has highlighted certain failure mechanisms as being the most important to long-term power generation. These include light-induced effects, corrosion of the cell monolithic interconnects, electrochemical corrosion between cells and the module frame, hot-spot heating and UV photodegradation of polymer encapsulants and frame members. Research at the Jet Propulsion Laboratory during 1987 has focused on measuring and characterizing many of these degradation mechanisms. A summary of the results is presented, together with references to recent publications of detailed results in each area.


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