The energy relaxation of hot electrons in a strongly coupled, n-type GaAs/AlGaAs superlattice is measured by analysing the temperature and electric-field dependence of the interminiband absorption. Electrons are heated up by an electric-field pulse and the resulting change of the electron temperatur
Mean free path of ballistic electrons in GaAs/AlGaAs superlattices
β Scribed by C. Rauch; G. Strasser; M. Kast; E. Gornik
- Publisher
- Elsevier Science
- Year
- 1999
- Tongue
- English
- Weight
- 56 KB
- Volume
- 25
- Category
- Article
- ISSN
- 0749-6036
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β¦ Synopsis
The mean free path of ballistic electrons in GaAs/AlGaAs superlattices was measured using the technique of hot electron spectroscopy in magnetic fields perpendicular to the growth direction. We utilize the fact that the total effective path of an injected hot electron is a function of the applied magnetic field. For a superlattice with 6.5 nm GaAs wells and 2.5 nm GaAlAs barriers we measure a mean free path of 80 nm. The experimental results of a ten-period SL sample are compared to a fully three-dimensional calculation of the transmission including interface roughness with island sizes of 10 nm. We demonstrate that the observed mfp is limited due to interface roughness scattering for temperatures up to 50 K.
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