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Mean escape depth of secondary electrons emitted from semiconductors and insulators

โœ Scribed by A. G. Xie, S. R. Xiao, H. Y. Wu


Book ID
120671315
Publisher
Springer-Verlag
Year
2013
Tongue
English
Weight
226 KB
Volume
87
Category
Article
ISSN
0019-5480

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๐Ÿ“œ SIMILAR VOLUMES


On the escape mechanism of secondary ele
โœ A.J. Dekker ๐Ÿ“‚ Article ๐Ÿ“… 1954 ๐Ÿ› Elsevier Science โš– 527 KB

Starting from the Boltzmann transport equation, the influence of lattice vibrations, traps and donor levels on the secondary yield of insulators is investigated by making a number of simplifying assumptions. For high trap densities it is found that the yield for high primary energies should be inver