✦ LIBER ✦

MBE growth of GaInAsSb/AlGaAsSb double heterostructures for infrared diode lasers

✍ Scribed by S.J. Eglash; H.K. Choi; G.W. Turner

Publisher: Elsevier Science
Year: 1991
Tongue: English
Weight: 688 KB
Volume: 111
Category: Article
ISSN: 0022-0248
DOI: 10.1016/0022-0248(91)91061-e

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Liquid phase epitaxial growth of GaInP/A

Liquid phase epitaxial growth of GaInP/AlGaAs double heterostructures for visible lasers

✍ Kunishige Oe; Seigo Ando; Hiromitsu Asai 📂 Article 📅 1984 🏛 Elsevier Science 🌐 English ⚖ 566 KB

Far-field solution of the Helmholtz equa

Far-field solution of the Helmholtz equation for double heterostructure diode lasers

✍ X. Zeng 📂 Article 📅 1993 🏛 Springer 🌐 English ⚖ 393 KB

MOCVD growth of (AlxGa1−x)yIn1−yP and do

MOCVD growth of (AlxGa1−x)yIn1−yP and double heterostructures for visible light lasers

✍ Isao Hino; Tohru Suzuki 📂 Article 📅 1984 🏛 Elsevier Science 🌐 English ⚖ 633 KB

MBE growth of AlGaAs/GaAs double- hetero

MBE growth of AlGaAs/GaAs double- heterostructure light emitting diodes on GaAs(111)A and (211)A substrates using all-silicon doping

✍ K. Fujita; H. Ohnishi; P.O. Vaccaro; T. Watanabe 📂 Article 📅 1997 🏛 Elsevier Science 🌐 English ⚖ 307 KB

A10.3Ga0.TAs/GaAs double-heterostructure (DH) light emitting diodes have been grown on GaAs (lll)A and (211)A substrates by molecular beam epitaxy using only Si dopant.

Recent developments in the MBE growth of

Recent developments in the MBE growth of wide bandgap II – VI semiconductors for laser diodes and LEDs

✍ J. Qiu; H. Cheng; J.M. DePuydt; M.A. Haase 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 680 KB

Selectively embedded growth by chemical

Selectively embedded growth by chemical beam epitaxy for the fabrication of InGaAs/InP double-heterostructure lasers

✍ M. Gotoda; H. Sugimoto; Y. Nomura; T. Isu; M. Nunoshita; S. Maruno 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 433 KB