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MBE growth of Ga-Al-In-As ternary and quaternary alloy compositions

โœ Scribed by E.G. Scott; D.A. Andrews; G.J. Davies


Book ID
103163699
Publisher
Elsevier Science
Year
1987
Tongue
English
Weight
163 KB
Volume
81
Category
Article
ISSN
0022-0248

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## Abstract The structural properties of GaAs and AlGaAs nanowhiskers (NWs) grown by molecular beam epitaxy (MBE) on a GaAs substrate surfaces of different crystallographic orientations are investigated. Under optimal growth conditions, the aspect ratio of MBE grown GaAs NWs is higher than 100. The