## Abstract This paper describes our recent progress on InN, In‐rich In~__x__~ Ga~1–__x__~ N, and InN/In~__x__~ Ga~1–__x__~ N quantum wells (QWs) grown by radio‐frequency plasma‐assisted molecular‐beam epitaxy. Among the essential growth sequences to obtain high‐quality InN, the nitridation process
MBE-growth, characterization and properties of InN and InGaN
✍ Scribed by Nanishi, Y. ;Saito, Y. ;Yamaguchi, T. ;Hori, M. ;Matsuda, F. ;Araki, T. ;Suzuki, A. ;Miyajima, T.
- Book ID
- 105361865
- Publisher
- John Wiley and Sons
- Year
- 2003
- Tongue
- English
- Weight
- 297 KB
- Volume
- 200
- Category
- Article
- ISSN
- 0031-8965
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In this contribution we report on the growth of coherently strained, pseudomorphic InGaN layers on GaN templates by RF-MBE. Structural properties characterized by HR-XRD exhibit good crystalline quality and homogeneity of the grown layers. The incorporation efficiency of In into the InGaN layer was
## Abstract Structural and luminescence properties of In‐rich In__~x~__ Ga~1−__x__~ N (0.71 ≤ __x__ ≤ 1) layers are comprehensively studied. The layers were grown on (0001) sapphire substrates by radio‐frequency plasma‐assisted molecular‐beam epitaxy, employing two types of underlying structures: l