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MBE growth and properties of GaMnAs with high level of Zn acceptor incorporation

✍ Scribed by Asubar, J. T. ;Sato, S. ;Jinbo, Y. ;Uchitomi, N.

Book ID
105364027
Publisher
John Wiley and Sons
Year
2006
Tongue
English
Weight
355 KB
Volume
203
Category
Article
ISSN
0031-8965

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✦ Synopsis

Abstract

GaMnAs epitaxial films with high Zn incorporation level were prepared by molecular beam epitaxy. Our results indicate an increasing hole concentration p accompanied by decreasing Curie temperature T ~C~ and transition towards metallic behavior of the epitaxial film properties with increasing level of Zn incorporation. (Β© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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