Semiconductor InAs, GaSb and InAs/In x Ga 1 À x Sb superlattices have been used for optoelectronic devices in a wide infrared region from near to long wavelength infrared. The efficiency of these devices could be increased shrinking the size and modifying the constituent structure. Nanostructured ma
✦ LIBER ✦
MBE growth and characterization of InxGa1−xSb/InAs strained layer superlattices
✍ Scribed by R. Fashe; J.T. Zborowski; T.D. Golding; H.D. Shih; P.C. Chow; K. Matsuichi; B.C. Covington; A. Chi; J. Zheng; H.F. Schaake
- Book ID
- 107791874
- Publisher
- Elsevier Science
- Year
- 1991
- Tongue
- English
- Weight
- 403 KB
- Volume
- 111
- Category
- Article
- ISSN
- 0022-0248
No coin nor oath required. For personal study only.
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