InGaN multiple quantum well lasers grown
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Heffernan, J. ;Kauer, M. ;Johnson, K. ;Zellweger, C. ;Hooper, S. E. ;Bousquet, V
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Article
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2005
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John Wiley and Sons
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English
β 198 KB
## Abstract We report progress in the development of InGaN multiple quantum well laser diodes grown by MBE. Lasers were grown by gasβsource MBE using ammonia as the source of nitrogen. Devices were grown on both GaN template substrates with dryβetched laser facets, and on low dislocation density fr