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1.3 μm InAsP quantum well lasers grown by solid source MBE

✍ Scribed by Mottahedeh, R.; Haywood, S.K.; Woodbridge, K.; Hopkinson, M.; Hill, G.; Rivers, A.

Book ID
114455712
Publisher
The Institution of Electrical Engineers
Year
1998
Tongue
English
Weight
387 KB
Volume
145
Category
Article
ISSN
1350-2433

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InGaN multiple quantum well lasers grown
InGaN multiple quantum well lasers grown by MBE
✍ Heffernan, J. ;Kauer, M. ;Johnson, K. ;Zellweger, C. ;Hooper, S. E. ;Bousquet, V 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 198 KB

## Abstract We report progress in the development of InGaN multiple quantum well laser diodes grown by MBE. Lasers were grown by gas‐source MBE using ammonia as the source of nitrogen. Devices were grown on both GaN template substrates with dry‐etched laser facets, and on low dislocation density fr