Coupled ultrathin InAs layers in GaAs as
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J. BrΓΌbach; A.Yu. Silov; J.E.M. Haverkort; W. van der Vleuten; J.H. Wolter
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Article
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1997
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Elsevier Science
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English
β 157 KB
We have determined the band offsets at the highly strained InAs/GaAs heterointerface by photoluminescence excitation (PLE) measurements of the symmetric and antisymmetric states in two coupled ultrathin InAs layers embedded in a GaAs matrix. The conduction band offset E c could be separated from the