Plasma CVD of high quality titanium nitr
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A. Weber; R. Poeckelmann; C.-P. Klages
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Article
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1997
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Elsevier Science
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English
โ 336 KB
High-quality TiN films were deposited in an electron-cyclotron-resonance (ECR) plasma process at low substrate temperatures between 100 and 450ยฐC using titanium(IV)isopropoxide (TIP) {Ti[OCH(CH3)2]4} as a precursor. TIP was introduced into the downstream region of an ECR nitrogen or ammonia plasma.