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Matrix and thermal effects on photoluminescence from PbS quantum dots

โœ Scribed by Kang, K.; Daneshvar, K.

Book ID
118006593
Publisher
American Institute of Physics
Year
2004
Tongue
English
Weight
326 KB
Volume
95
Category
Article
ISSN
0021-8979

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## Abstract We report the effect of defects that appear during capping layer growth or are introduced intentionally, on the photoluminescence (PL) properties of InAs strained quantum dots. A treatment of the samples with CCl~4~ during the growth leads to the reduction of native defect concentration