## Abstract We study a collisionless transport model for electrons in a semiconductor, and we perform an asymptotic analysis for low temperatures or large applied biases. We derive analytic relations for the built‐in potential and for the current which flows through the structure.
✦ LIBER ✦
Mathematical properties of a kinetic transport model for carriers and phonons in semiconductors
✍ Scribed by M. Galler; F. Schürrer
- Publisher
- Springer
- Year
- 2007
- Tongue
- English
- Weight
- 230 KB
- Volume
- 58
- Category
- Article
- ISSN
- 0044-2275
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