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Material characteristics of Hg1−xCdx > Te grown by organometallic vapor phase epitaxy

✍ Scribed by D.D. Edwall; E.R. Gertner; L.O. Bubulac


Book ID
118328946
Publisher
Elsevier Science
Year
1988
Tongue
English
Weight
658 KB
Volume
86
Category
Article
ISSN
0022-0248

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Hg~\_xCdxTe (MCT) films were grown by isothermal vapor phase epitaxy at a temperature of 593+ 1 °C for 24 h on CdTe substrates with different crystalline orientations: (i ] i)-re, (111)c0, ( 100) and ( 110). The film surfaces were observed by optical and scanning electron microscopies, and their com