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Material and ultrafast optoelectronic properties of furnace-annealed arsenic-ion-implanted GaAs

✍ Scribed by Gong-Ru Lin; Wen-Chung Chen; Chang, C.-S.; Shyh-Chin Chao; Kaung-Hsiung Wu; Hsu, T.M.; Lee, W.C.; Ci-Ling Pan

No coin nor oath required. For personal study only.

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