Many-particle effects in excitonic transitions in type-II Ge/Si quantum dots
β Scribed by A.I Yakimov; N.P Stepina; A.V Dvurechenskii; A.I Nikiforov; A.V Nenashev
- Book ID
- 104428038
- Publisher
- Elsevier Science
- Year
- 2002
- Tongue
- English
- Weight
- 133 KB
- Volume
- 13
- Category
- Article
- ISSN
- 1386-9477
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π SIMILAR VOLUMES
We report the study of infrared spectroscopy of intraband transitions in Ge/Si quantum dot superlattices. The superlattices, which were grown on (001) oriented Si substrates by a solid source molecular beam epitaxy system, are composed mainly of 20 or 30 periods of Ge dot layers and Si spacer films.
We report on optical and structural studies of the interface symmetry in CdSe/BeTe multiple-layer structures containing self-assembled quantum dots. Temperature and decay behavior of the broad photoluminescence (PL) band is consistent with the type-II transitions involving deeply localized electron