Magnetotransport characterization of AlGaN/GaN interfaces

✍ Scribed by Tauk, R. ;Tiberj, A. ;Lorenzini, P. ;Bougrioua, Z. ;Azize, M. ;Sakowicz, M. ;Karpierz, K. ;Knap, W.

• Book ID: 105363882
• Publisher: John Wiley and Sons
• Year: 2007
• Tongue: English
• Weight: 236 KB
• Volume: 204
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200622330

✦ Synopsis

Abstract

Magnetotransport studies of high quality AlGaN/GaN heterojunctions are reported. The transport and quantum lifetimes were respectively deduced from low temperature mobility and Shubnikov de Haas measurements as a function of carrier density in metal organic vapor phase epitaxy grown AlGaN/GaN/sapphire heterostructures. It is found that contrary to theoretical predictions both quantum and transport lifetimes have the same bell shape behavior versus carrier density. We determined experimental ratio of quantum to transport lifetime varying from 9 to 16 for carrier densities in 1–9 × 10^12^ cm^–2^ range. We show that the quantum lifetime is very sensitive to interface scattering at high carrier density. Therefore, our work shows how Shubnikov de Haas experiments can be used to characterize the quality of AlGaN/GaN interfaces used in modern light emitting devices. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)