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Magnetoresistance of lightly doped TmBa2Cu3Oxcrystals. Reorientation of the antiferromagnetic structure in a magnetic field

✍ Scribed by E. B. Amitin; A. G. Baikalov; A. G. Blinov; L. A. Boyarskii; V. Ya. Dikovskii; K. R. Zhdanov; M. Yu. Kameneva; L. P. Kozeeva; A. P. Shelkovnikov


Book ID
110147019
Publisher
SP MAIK Nauka/Interperiodica
Year
1999
Tongue
English
Weight
74 KB
Volume
70
Category
Article
ISSN
0021-3640

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Magnetoresistance of a Si-MOSFET structu
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We measured the magnetoresistance of a two-dimensional electron gas in a strongly disordered silicon MOSFET system in the presence of a parallel magnetic field up to 40 T. We observe resistance saturation for magnetic fields larger than the calculated magnetic field for fully spin-polarized electron