By the method of capacitance spectroscopy and of magnetotransport we have investigated the = 1 3 and 2 3 fractionalquantum-Hall-e ect (FQHE) states in gated GaAs=AlGaAs heterojunctions with tuned electron areal density. Our experimental results conΓΏrm the theoretical prediction of the fractional qua
β¦ LIBER β¦
Magnetocapacitance and loss factor of GaAs quantum Hall effect devices
β Scribed by Schurr, J; Ahlers, F; Pierz, K
- Book ID
- 125848724
- Publisher
- Institute of Physics
- Year
- 2014
- Tongue
- English
- Weight
- 614 KB
- Volume
- 51
- Category
- Article
- ISSN
- 0026-1394
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