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Modelling the breakdown of the quantum hall effect in silicon-MISFET'S and GaAs/GaAlAs-heterostructures

✍ Scribed by C. Breitlow; G. Nachtwei; J. Breitlow-Hertzfeldt; J.H. Seyfarth; P. Svoboda; L. Bliek; F.-J. Ahlers

Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
511 KB
Volume
12
Category
Article
ISSN
0749-6036

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✦ Synopsis

We measured the critical current of the quantum Hall effect on Si-MISFET-structures and its dependence on the gate voltage and on GaAs-GaAlAs-heterostuctures and its dependence on the magnetic field. Calculations based upon a Zener tunneling model1 were made to explain the experimental re Y" Its. For the Si structures we introduced a filling-factor-dependent width of the quantum Hall current path.

The current path is maximal near integer filling factors and decreases with deviation from the plateau centre. In contrast. we obtained good results with the real width for GaAs/GaAlAs-structures over the whole range of the plateaux.

πŸ“œ SIMILAR VOLUMES

Nonlinear current-voltage characteristic
Nonlinear current-voltage characteristic in narrow channels and low-voltage breakdown of the quantum hall effect
✍ O.G. Baler; P. Vasilopoulos; E.V. Mozdor πŸ“‚ Article πŸ“… 1994 πŸ› Elsevier Science 🌐 English βš– 167 KB

The current-voltage characteristic (CVC) and the breakdown of the quantum Hall effect (QHE) are considered in narrow quasi-two-dimensional channels subject to a strong perpendicular magnetic field \(\mathbf{B}\). The interaction of electrons with acoustical and piezoelectrical phonons leads to elect