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Magneto-optical determination of the exciton binding energy in GaAs quantum wells

✍ Scribed by W. Ossau; B. Jäkel; E. Bangert; G. Landwehr; G. Weimann


Publisher
Elsevier Science
Year
1986
Weight
52 KB
Volume
174
Category
Article
ISSN
0167-2584

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We calculated the exciton binding energy and energy levels in GaAs=Al0:3Ga0:7As DQWs with non-abrupt interfaces, taking into account the electric and magnetic ÿeld e ects. Numerical results for GaAs=Al0:3Ga0:7As double quantum wells show an enhancement of the e-hh exciton energy by as much as 50 meV