Magneto-conductance fluctuations in a V-grooved GaAs quantum-wire
β Scribed by T. Sugaya; C.-K. Hahn; M. Ogura; A. Sato; J.P. Bird; D.K. Ferry
- Publisher
- Elsevier Science
- Year
- 2003
- Tongue
- English
- Weight
- 501 KB
- Volume
- 19
- Category
- Article
- ISSN
- 1386-9477
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β¦ Synopsis
We study the magneto-resistance of a V-grooved GaAs quantum-wire ΓΏeld-e ect transistor (QWR-FET) realized by selective growth of metalorganic vapor phase epitaxy. At low temperatures, the magneto-resistance of the wire shows reproducible uctuations resulting from the quantum interference of electrons in the wire. The gate-voltage and temperature dependence of the conductance uctuations are studied, and the latter reveal evidence for the robust phase coherence of electrons in the V-grooved QWR.
π SIMILAR VOLUMES
The distribution of electron current in GaAs=AlGaAs v-groove quantum wire structures with groove widths varying from 1 to 25 m has been studied using far-and near-ΓΏeld spectroscopy techniques. We ΓΏnd clear evidence of the formation of 'corner' quantum wires in wide grooves which coalesce to form sin